STO Graphene Lift Off Paper Published in Sci Advances

How can we achieve the transfer of oxides to flexible substrates for emerging electronics? Led by Hyojin Yoon and Bharat Jalan at the University of Minnesota, our exciting paper describes the lift off of high-quality STO grown on graphene. Writing in Science Advances, we show it is possible to synthesize high-quality films via remote epitaxy using hybrid MBE and successfully transfer these materials to another substrate for novel electronics.

From the abstract:

The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining freestanding epitaxial nanomembranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically used in growing epitaxial oxides can damage graphene. Here, we demonstrate the successful use of hybrid molecular beam epitaxy for SrTiO3 growth that does not require an independent oxygen source, thus avoiding graphene damage. This approach produces epitaxial films with self-regulating cation stoichiometry. Furthermore, the film (46-nm-thick SrTiO3) can be exfoliated and transferred to foreign substrates. These results open the door to future studies of previously unattainable freestanding oxide nanomembranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy. This approach has potentially important implications for the commercial application of perovskite oxides in flexible electronics and as a dielectric in van der Waals thin-film electronics.

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